48th IEEE Semiconductor Interface Specialists Conference
Bahia Resort Hotel, San Diego, CA
December 6 - 9, 2017 (Tutorial: Dec 6)

The 2017 Conference Program is available here.

bullet

2017 Technical Invited Talks

  • Prof. Joerg Appenzeller, Purdue U.
    Band-to-band tunneling devices from two-dimensional materials
  • Prof. Suman Datta, Notre Dame U.
    Oxide Electronics Harnessing Electronic Phase Transitions
  • Dr. Paul Stradins, NREL
    Interfaces and contacts in next generation silicon photovoltaics
  • Dr. David Hemker, LAM Research
    Enabling Continued Device Scaling: An Equipment Supplier's Perspective
  • Prof. Cheol Seong Hwang, SNU, Korea
    Ferroelectric fluorite structured oxides: Materials fundamentals, switching, wake- up, and applications in electronics and energy
  • Prof. Evan Reed, Stanford U.
    Data Mining for New Two- and One-dimensional Weakly Bonded Solids and Application to Two-dimensional Phase Change Materials
  • Prof. Mark Reed, Yale U.
    Electronic Label-Free Biosensing Assays
  • Dr. Nirmal Ramaswamy, Micron Technology
    Emerging memories: High density integration challenges

bullet

2017 Wednesday Evening Tutorial

The Wednesday Evening Tutorial aims to give a good foundation in one topic frequently covered at the conference. The Tutorial is free for all SISC registered attendees.

  • Prof. Lars Samuelson, Lund U., Sweden
    Semiconductor nanowires and their interface properties enabling photovoltaics and lighting applications

The quest for large scale implementation of advanced III-V and III-Nitride semiconductor materials and devices is often hindered by either fundamental materials issues, like lattice mismatch or surfaces and interface states, or simply by cost issues. The use of nanowires (NWs) could possibly offer solutions to several of these challenges. The NWs that I will talk about are single-crystalline semiconductors shaped as one-dimensional rods, in most cases with the implementation of axial and radial heterostructures and interfaces for their functionality.

In this tutorial I will first introduce and motivate why NWs are studied and considered for applications such as for electronics, lighting and photovoltaics. Special emphasis will be put on the way NWs offer remedies to the issues mentioned above and offer smart design and functionality of opto-electronic devices based on heterostructures and interface control.

After this general motivation I will briefly review the semiconductor materials growth of NWs, typically formed either by a vapor-liquid-solid (VLS) mechanism or via selective area growth. I will here give examples of hetero-interface control in such NWs including atomically abrupt interfaces between different materials as well as between different crystalline structures. As a special case I will describe a novel growth mechanism in which perfect NWs as device structures are formed in an aerosol phase, a method given the name Aerotaxy

Extending from the growth mechanisms and their issues I will then turn to how this field of semiconductor materials research was converted into, what can be called, “a technology”. Starting from the spontaneous formation of nano-sized gold particles from a very thin gold film, as originally demonstrated by Dr. Kenji Hiruma, perfectly controlled dimensions and locations of NWs was achieved via the development of top-down controlled self-assembly of designed perfect arrays of NWs.

In the later part of this lecture I will turn to examples of application areas where NWs appear to offer significantly novel opportunities to change the respective fields. Among these I will primarily talk about the way NWs enable the realization of inexpensive and efficient solar cells, for which interface control and surface passivation is absolutely critical. These NWs may either be used as a very thin NW-array film or be operating in a tandem configuration with state-of-the-art silicon solar cells, where the Aerotaxy method of fabrication appears as a solution to the very tough cost issues for terrestrial solar cell implementation.

Related to the quest for high-performance III-Nitride emitters for displays and lighting I will give examples of how III-Nitride NWs have enabled the development of NW-LEDs in which an array of such single NW LEDs can operate as RGB-emitting micro-LEDs, highly suitable for display applications. Finally I will present very recent research where we have learned how the control of ideal nucleation of GaN NWs offers a means of forming threading-dislocation-free and relaxed c-planar InXGa1-XN with X in the range 0 ≤ X ≤ 0.2 as a generic platform for demanding device applications, such as direct-emitting green, yellow and red LEDs for full color temperature control as required for Human Centric Lighting systems.

bullet

Past SISC programs are available here.