2010 Technical Invited Talks

• Prof. Chris Hinkle, UT Dallas, USA
  In-situ studies of high-K oxide growth on III-V semiconductors
• Dr. Paul Kirsch, SEMATECH, USA
  Materials and Processes for high-K Metal Gate Stacks for 28 nm and beyond
• Dr. Koji Kita, University of Tokyo, Japan
  Behaviour of Oxides on Ge semiconductors
• Prof. Jochen Mannhart, University of Augsburg, Germany
  Design and Fabrication of Quantum-Enhanced Capacitors for CMOS-Applications
• Dr. Akihiro Nitayama, Toshiba, Japan
  BiCS Flash Memory technology
• Dr. Marko Radosavljevic, Intel, Portland, USA
  High performance InGaAs quantum well FETs with high-K dielectrics
• Prof. Yee-Chia Yeo, National University of Singapore, Singapore
  Nanowire transistors: Performance limits, strain engineering, reduction of parasitic resistance

2010 Wednesday Evening Tutorial

The Wednesday Evening Tutorial aims to give a good foundation in one topic frequently covered at the conference. The Tutorial is free for all SISC registered attendees.

• Dr. Matthias Passlack, TSMC Europe, Leuven, Belgium
  Interface state analysis on non-silicon semiconductors and the role of heterostructures

Past SISC programs are available here.