48th IEEE Semiconductor Interface Specialists Conference
Bahia Resort Hotel, San Diego, CA
December 6 - 9, 2017 (Tutorial: Dec 6)

The full 2016 Conference Program is available here.

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2016 Confirmed Technical Invited Talks

  • Prof. K. Banerjee, UCSB
    2D/3D Tunnel FETs
  • Prof. P. McIntyre, Stanford U.
    Interface Defect Passivation for High Performance Insulator-Protected MIS Photosynthesis and Photovoltaic Cells
  • Dr. J. Muller, Fraunhofer IPMS-CNT, Dresden, Germany
    Material Innovations in Ferroelectric Hafnium Oxide - Towards Cheaper Memories, Steeper Slopes and New Value Adders for HKMG Technologies
  • Prof. J. Robinson, Penn State U.
    2D/3D Interfaces: Where the Magic Happens
  • Prof. S. Salahuddin, UC Berkeley
    Negative Capacitance and Its Implications for Low Voltage Transistors
  • Prof. S. Takagi, U. Tokyo, Japan
    Critical issues and Challenges of High-k Gate Stacks for Ge MOSFETs
  • Dr. A. Verhulst, imec, Belgium
    Perspective on III-V Tunnel-FETs: bridging the gap between ideal device design and experimental realizations through calibration
  • Prof. L.-E. Wernersson, Lund University, Sweden
    III-V Nanowire MosFETs and Tunnel FETs

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2016 Wednesday Evening Tutorial

The Wednesday Evening Tutorial aims to give a good foundation in one topic frequently covered at the conference. The Tutorial is free for all SISC registered attendees.

  • Dr. T. Theis,, Columbia Nano Initiative
    Materials, Devices, and Circuit Architectures for Future Electronics

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Past SISC programs are available here.