The full 2011 Conference Program is available here.

2011 Technical Invited Talks

• Dr. Supratik Guha, IBM Thomas J. Watson Research Center, USA
  Scaling beyond conventional Si and materials challenges
• Prof. Minghwei Hong, National Tsing Hua University, Taiwan
  III-V/high-k gate stacks
• Prof. Cheol Seong Hwang, Seoul National University, Korea
  Resistive RAM
• Dr. Lars-Ake Ragnarsson, IMEC, Belgium
  Ultrathin EOT scaling of high-k/metal gate stacks
• Prof. Darrell Schlom, Cornell University
  Oxide-based heterostructures
• Prof. Shinichi Takagi, Tokyo University, Japan
  Ge gate stacks and devices
• Prof. Iain Thayne, University of Glasgow, Scotland
  III-V MOSFETs
• Prof. Peide Ye, Purdue University
  InGaAs/high-k gate stacks and devices

2011 Wednesday Evening Tutorial

The Wednesday Evening Tutorial aims to give a good foundation in one topic frequently covered at the conference. The Tutorial is free for all SISC registered attendees.

• Prof. Mark Lundstrom, Purdue University, USA
  Understanding the Nanoscale MOSFET

MOSFET scaling continues to take transistors to smaller and smaller dimensions while advances in nanoscience provide fascinating new possibilities for electronic technologies. The MOSFET is now a true nanoelectronic device – one of enormous importance for computing, data storage, and communications. The research challenges are now about scaling below 10 nm channel lengths where traditional, textbook MOSFET theory begins to break down. Using simple models that have been backed-up by rigorous quantum mechanical simulations, this tutorial will show that the essential physics of very small MOSFETs can be simply understood. We begin with a discussion of the ballistic MOSFET and then discuss how carrier scattering affects the performance. We will explain why silicon MOSFETs operate surprisingly close to the ballistic limit – in spite of a large amount of scattering - and show that III-V HEMTs operate essentially at the ballistic limit. The reason why traditional concepts such as mobility and saturation velocity continue to have relevance will be discussed, and new concepts, like “ballistic mobility” and “injection velocity” will be introduced. Although the approach used in this tutorial appears to be much different from traditional MOSFET theory, we will show that it is easily related to the traditional approach. Finally, the limitations of the approach will be identified and the new challenges for scaling below 10 nm channel lengths will be identified. Understanding the MOSFET as a nanoelectronic device is not only useful for advancing MOSFET nanotechnology, it also provides a familiar starting point for understanding nanoelectronic devices more generally.

Past SISC programs are available here.