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Special Invited Talk on the occasion of the 40th SISC

2009 Technical Invited Talks
- Prof. Charles H. Ahn, Yale University, USA
Novel charge-based multiferroic composite heterostructures
- Dr. Xavier Garros, CEA-LETI-Minatec, Grenoble, France
How to improve mobility, performance, and BTI reliability of advanced high-k/metal gate transistors?
- Prof. Hideki Hasegawa, Hokkaido University, Sapporo, Japan
Fermi level pinning and its removal at III-V MOS interfaces
- Dr. Jan Van Houdt, IMEC, Leuven, Belgium
Memory technology: Evolutionary versus revolutionary concepts
- Prof. Andrew Kummel, University of California San Diego, USA
Passivation of InGaAs and InAs by ALD Precursors
- Dr. Naoto Umezawa, National Institute for Materials Science, Tsukuba, Japan
Quality control of high-k gate oxides by doping with impurities: Guidelines from theoretical analysis

2009 Wednesday Evening Tutorial
The Wednesday evening Tutorial aims to give a good foundation in one topic frequently covered at the conference. The Tutorial is free for all SISC registered attendees.
- Dr. Thomas Schroeder, IHP Frankfurt (Oder), Germany
Physical Characterization of thin oxide films by XRD and XPS: From conventional laboratory to modern synchrotron techniques

Past SISC programs are available here.

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