Special Invited Talk on the occasion of the 40^th SISC

• Prof. T. P. Ma, Yale University, USA
  Gate Dielectrics, Interfaces, and SISC

2009 Technical Invited Talks

• Prof. Charles H. Ahn, Yale University, USA
  Novel charge-based multiferroic composite heterostructures
• Dr. Xavier Garros, CEA-LETI-Minatec, Grenoble, France
  How to improve mobility, performance, and BTI reliability of advanced high-k/metal gate transistors?
• Prof. Hideki Hasegawa, Hokkaido University, Sapporo, Japan
  Fermi level pinning and its removal at III-V MOS interfaces
• Dr. Jan Van Houdt, IMEC, Leuven, Belgium
  Memory technology: Evolutionary versus revolutionary concepts
• Prof. Andrew Kummel, University of California San Diego, USA
  Passivation of InGaAs and InAs by ALD Precursors
• Dr. Naoto Umezawa, National Institute for Materials Science, Tsukuba, Japan
  Quality control of high-k gate oxides by doping with impurities: Guidelines from theoretical analysis

2009 Wednesday Evening Tutorial

The Wednesday evening Tutorial aims to give a good foundation in one topic frequently covered at the conference. The Tutorial is free for all SISC registered attendees.

• Dr. Thomas Schroeder, IHP Frankfurt (Oder), Germany
  Physical Characterization of thin oxide films by XRD and XPS: From conventional laboratory to modern synchrotron techniques

Past SISC programs are available here.