41st IEEE Semiconductor Interface Specialists Conference
The Catamaran Hotel, San Diego, CA
December 2-4, 2010 (Tutorial: Dec 1)

2010 Technical Invited Talks

  • Prof. Chris Hinkle, UT Dallas, USA
    In-situ studies of high-K oxide growth on III-V semiconductors
  • Dr. Paul Kirsch, SEMATECH, USA
    Materials and Processes for high-K Metal Gate Stacks for 28 nm and beyond
  • Dr. Koji Kita, University of Tokyo, Japan
    Behaviour of Oxides on Ge semiconductors
  • Prof. Jochen Mannhart, University of Augsburg, Germany
    Design and Fabrication of Quantum-Enhanced Capacitors for CMOS-Applications
  • Dr. Akihiro Nitayama, Toshiba, Japan
    BiCS Flash Memory technology
  • Dr. Marko Radosavljevic, Intel, Portland, USA
    High performance InGaAs quantum well FETs with high-K dielectrics
  • Prof. Yee-Chia Yeo, National University of Singapore, Singapore
    Nanowire transistors: Performance limits, strain engineering, reduction of parasitic resistance

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2010 Wednesday Evening Tutorial

The Wednesday Evening Tutorial aims to give a good foundation in one topic frequently covered at the conference. The Tutorial is free for all SISC registered attendees.

  • Dr. Matthias Passlack, TSMC Europe, Leuven, Belgium
    Interface state analysis on non-silicon semiconductors and the role of heterostructures

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Past SISC programs are available here.