The SISC is a workshop-style conference that provides a forum for device engineers, solid state physicists, and materials scientists to discuss topics of common interest both formally through invited and contributed presentations, and informally during a variety of events including a poster presentation session. The conference will be held immediately prior to the IEDM. SISC is sponsored by the IEEE Electron Device Society.

The program includes talks from all areas of MOS science and technology, including but not limited to the following:

• SiO₂ and high-k dielectrics on Si and their interfaces
• Insulators on high-mobility and alternative substrates (SiGe, Ge, III-V, SiC, etc.)
• MOS gate stacks with metal gate electrodes
• Stacked dielectrics for non-volatile memory
• Oxide and interface structure, chemistry, defects, and passivation: Theory and experiment
• Electrical characterization, performance and reliability of MOS-based devices
• Surface cleaning technology and impact on dielectrics and interfaces
• Dielectrics on nanowires, nanotubes, and graphene
• Oxide electronics and multiferroics
• Interfaces in photovoltaics, e.g. Si passivation

The program will be complemented by Invited Presentations from both industry and academia.

The Wed Tutorial will shed light on a single topic in depth, particularly benefiting students and newcomers to the field.

A Best Student Presentation award will be given in memory of E.H. Nicollian, who made many important contributions to the field and had a strong presence within the SISC.

You can also download the Call in the PDF format. Please help us promote SISC among your colleagues and collaborators by forwarding the Call to them and by posting a hard copy at your affiliation.

For questions about the SISC focus, abstract submission, and related issues, please contact the Technical Program Chair.