The SISC is a workshop-style conference that provides a forum for device engineers, solid state physicists, and materials scientists to discuss topics of common interest both formally through invited and contributed presentations, and informally during a variety of events including a poster presentation session. The conference will be held immediately prior to the IEDM. SISC is sponsored by the IEEE Electron Device Society.

The program includes talks from all areas of MOS science and technology, including but not limited to the following:

• High-k gate dielectrics and SiO₂ on Si and their interfaces
• Insulators on high-mobility and alternative substrates (SiGe, Ge, III-V, GaN, etc.)
• MOS gate stacks with metal gate electrodes
• Stacked dielectrics for non-volatile memory
• Oxide and interface structure, chemistry, defects, and passivation: Theory and experiment
• Electrical characterization, performance and reliability of MOS-based devices
• Surface cleaning technology and impact on dielectrics and interfaces

SISC will further explore novel topics such as:

• Dielectrics on nanowires, nanotubes, and graphene
• Correlated oxides, materials for non-volatile memory
• Functional oxides and oxide electronics (LaAlO₃/SrTiO₃ etc.)

The program will be complemented by Invited Presentations from both industry and academia.

The Wed Tutorial will shed light on a single topic in depth, particularly benefiting students and newcomers to the field.

A Best Student Presentation award will be given in memory of E.H. Nicollian, who made many important contributions to the field and had a strong presence within the SISC.

Please download the IEEE SISC Call and help us advertise it by posting it at your affiliation.

Abstract submission deadline is July 23, 2010

To submit your abstract, follow these instructions.