The SISC is a workshop-style conference that provides a forum for device engineers, solid state physicists, and materials scientists to discuss topics of common interest both formally through invited and contributed presentations, and informally during a variety of events including a poster presentation session. The conference will be held immediately prior to the IEDM. SISC is sponsored by the IEEE Electron
The program includes talks from all areas of MOS science and technology, including but not limited to the following:
- SiO2 and high-k dielectrics on Si and their interfaces
- Insulators on high-mobility and alternative substrates (SiGe, Ge, III-V, SiC, etc.)
- MOS gate stacks with metal gate electrodes
- Stacked dielectrics for non-volatile memory
- Oxide and interface structure, chemistry, defects, and passivation: Theory and experiment
- Electrical characterization, performance and reliability of MOS-based devices
- Surface cleaning technology and impact on dielectrics and interfaces
- Dielectrics on nanowires, nanotubes, and graphene
- Oxide electronics and multiferroics
- Interfaces in photovoltaics, e.g. Si passivation
- 2D materials and devices and their interfaces
A Best Student Presentation award will be given in memory of E.H. Nicollian, who made many important contributions to the field and had a strong presence within the SISC.
Abstract submission deadline is extended to Aug 17, 2015
To submit your abstract, follow these instructions.
You can also download the 2015 Call in the PDF format. Please help us promote SISC among your colleagues and collaborators by forwarding the Call to them and by posting a hard copy at your affiliation.
For questions about the SISC focus, abstract submission, and related issues, please contact the Technical Program Chair.
2015 Confirmed Technical Invited Talks
- Dr. Mikhail Baklanov, imec, Belgium
Ultralow-k insulating materials for 10-nm technology node and beyond
- Prof. Massimo Fischetti, UT Dallas, USA
Physics of electronic transport in low-dimensionality materials for future FETs
- Prof. Andrew Kummel, UCSD, USA
Monolayer Organic Films for Nucleation of ALD on Single Layer Graphene and TMD surfaces
- Prof. Masaaki Kuzuhara, Fukui University, Japan
GaN-based HEMTs for High-voltage and Low-loss Power Applications
- Prof. Blanka Magyari-Kope, Stanford University, USA
Microscopic Aspects of Conductive Filaments Evolution in Metal Oxide RRAM devices
- Dr. Alessandro Molle, MDM Laboratory, Agrate Brianza, Italy
Silicon at the two-dimensional limit: the debut of the silicene transistor
- Prof. Akira Toriumi, University of Tokyo, Japan
Materials and Process Controls for Scaled Germanium Gate Stacks
- Prof. Wenjuan Zhu, University of Illinois, Urbana-Champaign, USA
Two-dimensional Layered Materials and Nano-scale Devices
2015 Wednesday Evening Tutorial
The Wednesday Evening Tutorial aims to give a good foundation in one topic frequently covered at the conference. The Tutorial is free for all SISC registered attendees.
- Dr. Iuliana Radu, imec, Belgium
Spin logic options for Beyond or Along CMOS