The SISC is a workshop-style conference that provides a forum for device engineers, solid state physicists, and materials scientists to discuss topics of common interest both formally through invited and contributed presentations, and informally during a variety of events including a poster presentation session. The conference will be held immediately prior to the IEDM. SISC is sponsored by the IEEE Electron Device Society.

The program includes talks from all areas of MOS science and technology, including but not limited to the following:

• SiO₂ and high-k dielectrics on Si and their interfaces
• Insulators on high-mobility and alternative substrates (SiGe, Ge, III-V, SiC, etc.)
• MOS gate stacks with metal gate electrodes
• Stacked dielectrics for non-volatile memory
• Oxide and interface structure, chemistry, defects, and passivation: Theory and experiment
• Electrical characterization, performance and reliability of MOS-based devices
• Surface cleaning technology and impact on dielectrics and interfaces
• Dielectrics on nanowires, nanotubes, and graphene
• Oxide electronics and multiferroics
• Interfaces in photovoltaics, e.g. Si passivation
• 2D materials and devices and their interfaces

A Best Student Presentation award will be given in memory of E.H. Nicollian, who made many important contributions to the field and had a strong presence within the SISC.

Abstract submission deadline is extended to Aug 11, 2014

To submit your abstract, follow these instructions.

You can also download the 2014 Call in the PDF format. Please help us promote SISC among your colleagues and collaborators by forwarding the Call to them and by posting a hard copy at your affiliation.

For questions about the SISC focus, abstract submission, and related issues, please contact the Technical Program Chair.

2014 Technical Invited Talks

• Prof. Kevin Chen, Hong Kong University of Science and Technology, Hong Kong
  Dielectric/III-N Interfaces with Nitridation Interlayer for GaN Power Electronics
• Dr. Luigi Colombo, Texas Instruments, USA
  2D Materials Growth and Prospects
• Dr. Jacopo Franco, imec, Belgium
  Reliability challenges of high mobility channel technologies: SiGe, Ge and InGaAs
• Prof. Roy Gordon, Harvard University, USA
  Single-crystal oxide insulators grown epitaxially on GaAs, Ge and GaN by ALD
• Dr. Jan Van Houdt, imec, Belgium
  Memory technologies for the terabit era: a paradigm shift
• Prof. Ali Javey, UC Berkeley, USA
  Contact engineering, chemical doping and heterostructures of layered chalcogenides
• Dr. Sergei V. Kalinin, Oak Ridge National Lab, USA
  In-situ probing surfaces of oxide electronic materials with atomic resolution: physical functionalities and memristive mechanisms
• Prof. Kousuke Nagashio, Univ. of Tokyo, Japan
  Carrier response in electric-field-induced bandgap of bilayer graphene
• Dr. Tun-Wen Pi, National Synchrotron Radiation Research Center, Taiwan
  High k oxides on (In)GaAs surfaces studied by synchrotron radiation photoemission
• Prof. Thomas Schroeder, IHP (Frankfurt/Oder), Germany
  From global and local Ge integration approaches on Si(001): Novel insights by advanced synchrotron XRD techniques
• Prof. Max Di Ventra, UCSD, USA
  Memcomputing: computing with and in memory
• Prof. Ken Uchida, Keio University, Japan
  Evaluation of thermal properties of nanoscale MOSFETs and thermal aware device design of nano devices

2014 Wednesday Evening Tutorial

The Wednesday Evening Tutorial aims to give a good foundation in one topic frequently covered at the conference. The Tutorial is free for all SISC registered attendees.

• Dr. Perrine Batude, CEA-LETI, France
  3D monolithic integration: an alternative path towards CMOS scalability