The SISC is a workshop-style conference that provides a forum for device engineers, solid state physicists, and materials scientists to discuss topics of common interest both formally through invited and contributed presentations, and informally during a variety of events including a poster presentation session.

The program includes talks from all areas of MOS science and technology, including but not limited to the following:

• SiO₂ and high-k gate dielectrics on Si and their interfaces
• Insulators on high-mobility and alternative substrates (SiGe, Ge, III-V, SiC, etc.)
• MOS gate stacks with metal gate electrodes
• Stacked dielectric layers for non-volatile memory
• Oxide and interface structure, chemistry, defects, and passivation: Theory and experiment
• Electrical characterization, performance and reliability of MOS-based devices
• Surface cleaning technology and impact on dielectrics and interfaces

SISC will further explore novel topics such as:

• Dielectrics on nanowires, nanotubes, and graphene
• Oxide electronics (LaAlO₃/SrTiO₃ etc.)
• Multiferroics
• Interfaces in photovoltaics, in particular Si surface/interface passivation

The Wed Tutorial will shed light on a single topic in depth, particularly benefiting students and newcomers to the field.

The conference will be held immediately prior to the IEDM. SISC is sponsored by the IEEE Electron Device Society and is endorsed by the Materials Research Society.

A Best Student Presentation award will be given in memory of E.H. Nicollian, who made many important contributions to the field and had a strong presence within the SISC.