The SISC is a workshop-style conference that provides a forum for device engineers, solid state physicists, and materials scientists to discuss topics of common interest, formally through invited and contributed presentations, and informally during various events including poster presentation sessions. The SISC is sponsored by the IEEE Electron Device Society.

This year, SISC will be held as a fully in-person event.

The program includes talks and poster presentations (theory and experiment) on the role of materials and their interfaces on performance and reliability of:

• Logic Devices for future technology nodes (Nanosheet, CFET, VFET, etc.),
• Insulators on High-Mobility substrates (SiGe, Ge, etc.),
• Non-Volatile Memory for AI / In-Memory / Neuromorphic Compute (ReRAM, PCM, ECRAM, etc.),
• Wide Bandgap semiconductor power devices (SiC, GaN, β-Ga₂O₃, etc.),
• Ferroelectric devices (FET, memory, etc.),
• Steep Sub-Threshold slope logic devices (Tunnel FETs, etc.),
• 2D materials and devices,
• Monolithic and/or Heterogeneous ICs (BEOL oxide transistors, interconnects, packaging, etc.),

including machine learning / materials discovery techniques developed and used for their study.

2023 Confirmed Technical Invited Talks

The technical program will be complemented by Invited Presentations from both industry and academia.

• Prof. Masaharu Kobayashi, U. Tokyo, Japan
  Oxide Semiconductor Transistors for LSI Application
• Dr. Anabela Veloso, imec, Belgium
  Entering a New Era of Nanosheet-based FET Device Architectures with Increased FEOL-BEOL Synergies
• Prof. Sarit Dhar, Auburn University, USA
  Interface Trapping and Scattering in 4H-SiC MOSFETs
• Prof. Daniel Gall, RPI, USA
  Interconnects: New Materials for High Conductivity
• Prof. Hyunsang Hwang, POSTECH, Korea
  Ovonic Threshold Switching (OTS) Device for Selector Applications
• Dr. Ashish Penumatcha, Intel, USA
  Enabling Gate-Pitch Scaling in the Angstrom Era
• Prof. Bilge Yildiz, MIT, USA
  Protonic Electrochemical Synapses for Analog Deep Learning and Beyond
• Prof. Enxia Zhang, Vanderbilt University, USA
  Radiation Effects and Reliability of 3D ICs

The Wed Tutorial will shed light on a single topic in depth, particularly benefiting students and newcomers to the field.

• Dr. Dale McHerron IBM, USA
  From Interconnects to Chiplets: Materials and Interfaces for Advanced Packaging

Recent technology trends in areas such as CMOS scaling, artificial intelligence, computational workloads, including data centers and at the edge, are driving a resurgence in packaging technology innovations, particularly with Heterogeneous Integration and chiplet architectures. This tutorial will analyze these developments with particular focus on the materials, processes, and interfaces that are at the center of these new innovations. I will provide an overview of packaging technology fundamentals to put these technologies in context as well as highlight some of the challenges and opportunities that are emerging.

The tutorial will also explore these technology trends and why advanced packaging technologies are so critical to address the challenges and opportunities presenting themselves and ultimately provide improvements in performance and cost required for next generation computational systems and associated hardware architectures. I will put some focus on trends and advancements in artificial intelligence, as this technology is creating unique opportunities for advanced packaging and chiplet architectures to enable significant performance gains and energy efficiency improvements over the next decade.

A Best Student Presentation Award will be given in memory of E. H. Nicollian, who made many important contributions to the field and had a strong presence within the SISC.

A Best Poster Award will be given in memory of T. P. Ma.

Abstract submission deadline extended to:
August 18, 2023

You can also download the Call in the PDF format. Please help us promote SISC among your colleagues and collaborators by forwarding the Call to them and by posting a hard copy at your affiliation.

For questions about the SISC focus, abstract submission, and related issues, please contact the Technical Program Chair.