The SISC is a workshop-style conference that provides a forum for device engineers, solid state physicists, and materials scientists to discuss topics of common interest, formally through invited and contributed presentations, and informally during various events including two poster presentation sessions. The SISC is sponsored by the IEEE Electron Device Society, and will be held right after the IEEE IEDM.

The program includes talks and poster presentations (theory and experiment) from all areas of MOS science and technology, including but not limited to:

• SiO₂ and high-k dielectrics on Si and their interfaces
• Insulators on high-mobility and alternative substrates (SiGe, Ge, III-V and III-N, SiC, etc.)
• MOS gate stacks with metal gate electrodes
• Stacked dielectrics for non-volatile memory
• Oxide and interface structure, chemistry, defects, and passivation: theory and experiment
• Electrical characterization, performance and reliability of MOS-based devices
• Surface cleaning technology and impact on dielectrics and interfaces
• Dielectrics on nanowires, nanotubes, and graphene
• Oxide electronics and multiferroics
• Interfaces in photovoltaics, e.g. Si passivation
• 2D materials and devices and their interfaces
• Interfaces in semiconductor lighting and optical communications
• Interfaces and surfaces in biotechnology such as bio-sensing

A Best Student Presentation award will be given in memory of E.H. Nicollian, who made many important contributions to the field and had a strong presence within the SISC.

Abstract submission deadline Aug 14, 2017

To submit your abstract, follow these instructions.

You can also download the Call in the PDF format. Please help us promote SISC among your colleagues and collaborators by forwarding the Call to them and by posting a hard copy at your affiliation.

For questions about the SISC focus, abstract submission, and related issues, please contact the Technical Program Chair.

2017 Confirmed Technical Invited Talks

• Prof. Joerg Appenzeller, Purdue U.
  2D Tunneling FET
• Prof. Suman Datta, Notre Dame U.
  Novel selectors and Phase FETs
• Dr. David Ginley, NREL
  Photovoltaic materials, Devices and interfaces by design
• Dr. David Hemker, LAM Research
  Enabling Continued Device Scaling: An Equipment Supplier's Perspective
• Prof. Cheol Seong Hwang, SNU, Korea
  Ferroelectric HfO₂ - Materials fundamentals, switching, wake-up, and applications in electronics and energy
• Prof. Evan Reed, Stanford U.
  Leveraging machine learning to screen 2D van der Waals materials
• Prof. Mark Reed, Yale U.
  Field effect transistor biosensors
• Dr. Nirmal Ramaswamy, Micron Technology
  Emerging memories: High density integration challenges

2017 Wednesday Evening Tutorial

The Wednesday Evening Tutorial aims to give a good foundation in one topic frequently covered at the conference. The Tutorial is free for all SISC registered attendees.

• Prof. Lars Samuelson, Lund U., Sweden
  Semiconductor nanowires and their interface properties enabling photovoltaics and lighting applications